COMPOSITE MATERIAL, PROCESS OF ITS PRODUCTION, PANEL OF SEMICONDUCTOR DEVICE EMITTING HEAT, SEMICONDUCTOR DEVICE ( VARIANTS ), DIELECTRIC PANEL AND ELECTROSTATIC ABSORBING FACILITY Russian patent published in 2003 - IPC

FIELD: power electronics, polycrystalline modules. SUBSTANCE: proposed composite material includes metal and inorganic compound so formed that it has dendrite or rod shape. Specifically this material presents copper composite material that contains from 10 to 55 volume per cent of copper oxide Cu₂O and Cu and random impurities and coefficient of thermal expansion in temperature range from room temperature to + 300 C of 5•10^-6/^°C to 17•10^-6/^°C and thermal conductivity from 100 to 380 W/(m•k). Given composite material can be produced by process which includes stages of melting, molding and treatment, it is good for panel of semiconductor device emitting heat. EFFECT: increased plasticity and strength of composite material, prevention of deterioration of properties of semiconductor device caused by heat generation, raised functional reliability of it. 20 cl, 20 dwg