SEMICONDUCTOR POWER MODULE Russian patent published in 2007 - IPC H01L25/11 

FIELD: semiconductor power devices.

SUBSTANCE: proposed semiconductor power module has at least two current-carrying base wafers, plurality of semiconductor integrated circuits, and module package incorporating current-carrying cover and package stiff members; semiconductor integrated circuits are electrically connected by means of first main electrodes to at least two mentioned base wafers and by means of second main electrodes they are connected through flexible contact members to cover; the latter is joined with stiff members of module package and stiff members of the latter function to restrict compression of flexible contact members. Module has plurality of pre-assembled and fully checked submodules, each incorporating base wafer and at least one of mentioned semiconductor integrated circuits; semiconductor integrated circuits of each module are installed on base wafer of respective submodule; base wafer of each of many submodules is designed for displacement toward cover.

EFFECT: enhanced degree of standardization, enlarged range of rated currents.

5 cl, 7 dwg