METHOD OF MAKING SYSTEM FOR METAL PLATING SILICON SEMICONDUCTOR DEVICES Russian patent published in 2008 - IPC H01L21/28 

FIELD: electronics.

SUBSTANCE: invention pertains to electronics, particularly to microelectronics, and can be used when making silicon semiconductor devices. The method of making a system for metal plating silicon semiconductor devices involves forming a dielectric film based on silicon dioxide on a silicon substrate with active regions, formation in this film of contact windows to active elements of the substrate, deposition of a film of molten aluminium with a given thickness, formation of the metal pattern and subsequent thermal treatment for obtaining ohmic contacts. Thermal treatment is carried out in a hydrogen atmosphere with addition of 0.5-3.0 vol.% water or 0.25-1.5 vol.% oxygen.

EFFECT: higher quality of the system of metal plating due to reduced defectiveness and improved electrical characteristics.

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