FIELD: power electronics.
SUBSTANCE: proposed power electronic module incorporating at least one semiconductor integrated circuit made of semiconductor material with first and second main electrodes, first and second main leads, and contact strip which is in electric contact with first main electrode has doping component and incorporates provision to form between doping component and semiconductor material. Contact strip is covered with electricity conductive shielding layer incorporating at least one base conductive layer applied to contact strip and surface conductive layer forming outer contact surface, base and surface layers being primarily maid of different materials.
EFFECT: enhanced short-circuit resistance of semiconductor module.
8 cl 1 dwg
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