METHOD OF PRODUCTION OF MONOCRYSTALLINE SILICON Russian patent published in 2002 - IPC

FIELD: production of semiconductor materials; growth of silicon monocrystals. SUBSTANCE: method includes melting of starting silicon in crucible, introduction of seed, extraction of crystal from melt on revolving seed; process is conducted in inert gas atmosphere at coincidence of direction of rotation of crucible and crystal and at relationship of rotational speeds found from the following formula: , where ω_crn and ω_cryst are respectively rotational speeds of crucible and crystal, r/min; k is number from interval of 0.1 to 0.5; D_in is inner diameter of quartz crucible, mm; d_nom is nominal diameter of crystal being grown, mm; h_melt is initial depth of melt in crucible. Mm; H_h is length of heating part of heater, mm; γ is positioning coefficient taking into account position of crucible with melt in heater cavity and construction of thermal unit which is between 0.5 and 3.0 as it was preliminarily determined experimentally. EFFECT: possibility of growing dislocationless silicon monocrystals at homogeneous radial distribution of alloying admixture and oxygen at considerable mass of charge. 3 cl, 1 ex