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2 230 427

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(51)

IPC

(21) (22)

Application

2002116735/09, 2002-06-21

(24)

Start date

2002-06-21

(22)

Actual filing date

2002-06-21

(45)

Published

2004-06-10

(72)

Inventor

Ostrovskij O.A.Shishkin G.I.

(73)

Holder

Rossijskij Federal'Nyj Jadernyj Tsentr Vserossijskij Nauchno-Issledovatel'Skij Institut Ehksperimental'Noj Fiziki

NONVOLATILE MEMORY LOCATION Russian patent published in 2004 - IPC

Abstract RU 2230427 C2

FIELD: pulse engineering, computer engineering, and control systems. SUBSTANCE: nonvolatile memory location that has Schmitt flip-flop, majority element, and inverter is provided in addition with two diodes and capacitor. EFFECT: enhanced output noise immunity, reduced power requirement in data storage mode. 1 cl, 1 dwg

Similar patents RU2230427C2

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ENERGY-INDEPENDENT STORAGE CELL	1991	Shishkin G.I.	RU2036547C1
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ENERGY-INDEPENDENT STORAGE CELL	1991	Egorov L.B. Shishkin G.I.	RU2034397C1
ENERGY-DEPENDENT MEMORY CELL	1990	Egorov L.B. Shishkin G.I.	SU1780487A1
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FLIP-FLOP UNIT	1999	Egorov L.B. Ostrovskij O.A. Shishkin G.I.	RU2180985C2
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NOISE-IMMUNE PULSE COUNTER	1991	Egorov L.B. Eremin A.N. Shishkin G.I.	RU2038692C1
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RU 2 230 427 C2

Authors

Ostrovskij O.A.

Shishkin G.I.

Dates

2004-06-10—Published

2002-06-21—Filed