FIELD: nonferrous metallurgy.
SUBSTANCE: sun-quality silicon is obtained by carbothermic reduction from starting materials wherein purity of silicon oxide is at least 99.95% and that of reducing agent at least 99.9%. Thus obtained silicon is melted on lining with purity 99.9% and passed through channel located in crossed magnetic field 0.02 to 1 Tl. Cross section of channel does not exceed 10 mm in at least one direction. Simultaneously, electric current with density 20 to 1000 A/cm2 is passed over liquid silicon, after which the latter is crystallized.
EFFECT: increased purity adequate for use in solar energy engineering.
2 dwg
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