METHOD OF DIRECT OBTAINING OF POLYCRYSTALLINE SILICON FROM NATURAL QUARTZ AND FROM ITS HIGHLY PURE CONCENTRATES Russian patent published in 2014 - IPC C30B30/02 C30B29/06 C01B33/23 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of obtaining pure substances, which are applied in field of high technologies: semi-conductor, solar energy, fiber-optic communication. Method of obtaining polycrystalline silicon is realised by plasmochemical pyrolysis of initial quartz raw material particles in flow reactor in flow of plasma of inert gas - argon and hydrogen, and as initial quartz raw material applied is natural quartz concentrate with size of particles not larger than 20 mcm, pyrolysis is realised at temperature 6500-13000 K with decomposition of reacting mixture into silicon and oxygen atoms, after which gas phase atomic mixture is cooled in the interval from 6500 to 2000 K at rate 10⁵-10⁶ K/s to form silicon vapour due to binding of free oxygen with hydrogen without silicon re-oxidation, after which obtained silicon vapour is condensed by further cooling of mixture to 1000 K with formation of polycrystalline silicon in form of spherical particles.

EFFECT: method is highly effective and ecologically clean and makes it possible to obtain polysilicon with low prime cost directly from concentrates of natural quartz without application of additional reducers.

7 dwg, 2 tbl