FIELD: chemistry.
SUBSTANCE: invention relates to silicon cleaning suitable for making solar cells, semiconductor devices, MEMS devices, as well as use in chemical and pharmaceutical industry. Method of silicon refining in solid phase is performed in graphite crucible by adding of extractant to it, sodium metasilicate and processing of mixture in inert gas atmosphere at temperature approximating to silicon fusion temperature (1,390±10 °C).
EFFECT: invention ensures production of high-purity silicon.
3 cl, 1 dwg, 1 tbl
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