METHOD OF DETERMINING REGIONS OF CRYSTAL STRUCTURE DEFECT Russian patent published in 2004 - IPC

Abstract RU 2239814 C2

FIELD: measuring engineering.

SUBSTANCE: method includes obtaining voltage-current characteristics on a given area of the surface of a specimen to be investigated and determining the presence of defects of crystal structure from the voltage-current characteristic containing characteristic maximums.

EFFECT: excluded surface distraction.

2 cl, 6 dwg, 1 tbl

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RU 2 239 814 C2

Authors

Jugaj K.N.

Konovalenko K.B.

Sychev S.A.

Seropjan G.M.

Murav'Ev A.B.

Dates

2004-11-10Published

2002-07-17Filed