FIELD: applications of nanotechnology, computer engineering, in particular, design of single-electron gates and memory registers which operate under room temperature. SUBSTANCE: device has input electrode, output electrode and N control electrodes. Tunnel barrier junctions and inter-junction space are designed as ordered structure of molecules and clusters which provide tunnel junction for single electron correlated tunneling of electrons in device. Each control electrode is located in region of ordered structure of molecules and clusters. Tunnel junctions and inter-junction space provide tunnels which are small enough to reach of Coulomb-effect blockade of electrons at relatively high (room) temperature. EFFECT: increased speed, low heating, possibility to be used in design of high-sensitive sensors and detectors. 3 dwg
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