METHOD FOR EVALUATING DRIFT MOBILITY OF SEMICONDUCTORS Russian patent published in 2004 - IPC

Abstract RU 2239913 C2

FIELD: semiconductor engineering and electronics.

SUBSTANCE: proposed method depends on principally new approach to evaluation of drift mobility of semiconductors and includes measurement of time taken to attain maximal (peak) diffusion-drift current of nonequilibrium carriers excited by short light pulses from heavy absorption area through one of contacts. Mobility µ can be calculated from formula µ = d²(2Ut_max)^-1, where d is distance between contacts; U is applied voltage; t_max is time taken to attain peak value of photocurrent; l_E is drift length; l_D is diffusion length.

EFFECT: facilitated measurement procedure.

1 cl, 2 dwg

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RU 2 239 913 C2

Authors

Abdullaev A.A.

Aliev A.R.

Kamilov I.K.

Dates

2004-11-10—Published

2002-08-05—Filed