INTERNAL GAIN SEMICONDUCTOR DETECTOR BASED ON SEMI-INSULATING GALLIUM ARSENIDE AND PREPARATION METHOD THEREOF Russian patent published in 2016 - IPC H01L31/09 H01L31/18 

FIELD: radiography.

SUBSTANCE: invention relates to radiography, in particular to systems of digital image in x-ray and gamma-rays by means of multichannel semiconductor detector based on semi-insulating gallium arsenide. Semiconductor detector includes formation of semi-insulating i-area, which is based on gallium arsenide, compensated chromium, and metal contacts to it, between metal contacts and i-region of the semiconductor layer is formed, for example indium arsenide, with thickness less than diffusion length of electrons injected from metal contact in i-area, and reducing height of potential barrier contact metal-GaAs to energy of crystal thermal equilibrium, kT. Forming is performed by applying an indium layer on top of metal contacts to i-area and subsequent annealing of contacts in conditions sufficient for penetration of primary metal contact.

EFFECT: proposed structure and method of making allow implementing principle of internal amplification in multichannel semiconductor detectors.

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