FIELD: physics; semiconductors.
SUBSTANCE: invention relates to semiconductor electronics and can be used in making optoelectronic and optical components on design phases of products and testing workpieces. The method of determining photoelectric parametres of high-ohmic semiconductors involves exciting non-steady photo-emf in a crystal by illuminating a sample with an interference pattern formed by a reference and a phase-modulated signal light beam. The signal beam is modulated directly by the non-steady photo-emf signal itself, and photoelectric parametres: Maxwell relaxation time, conductivity relaxation time, their product, charge carrier mobility and wave frequency of spatial recharging trap sites are determined from the frequency value self-induced oscillations.
EFFECT: cutting on time and simplification of the process of testing semiconductor materials.
3 dwg
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