FIELD: thermoelectric energy conversion.
SUBSTANCE: proposed thermal cell has at least one n layer and at least one p layer of one or more doping semiconductors. These one or more n and p layers are disposed so that they form at least one p-n junction. At least one n layer and at least one p layer are selectively in electric contact. Temperature gradient is applied or picked off in parallel with boundary layer by at least one n and one p layers. At least one p-n junction is formed in effect along common, preferably greatest, length of n layer (layers) and p layer (layers) and consequently, along their common boundary layer.
EFFECT: improved design.
16 cl, 14 dwg
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