HIGH VOLTAGE BIPOLAR TRANSISTOR WITH STATIC INDUCTION Russian patent published in 2023 - IPC H01L29/73 

FIELD: power semiconductor devices.

SUBSTANCE: power bipolar transistors for high-frequency switching. A high-voltage bipolar transistor with static induction contains a single-crystalline substrate of n⁺-type conductivity with an epitaxial layer of n-type conductivity, local p⁺-type gate regions in a near-surface epitaxial layer of n-type conductivity and local n⁺-type sequentially made on it, source regions between p⁺-type regions, ohmic contacts to n⁺- and p⁺-type regions of the transistor structure, as well as electrically strengthening dividing p⁺-type conductivity rings or mesa-region along the periphery of the active part of the crystal with an etching depth of up to n⁺- type of single-crystal substrate, while the crystal structure of the high-voltage bipolar transistor is made on the basis of gallium arsenide GaAs single-crystal substrate of n⁺-type conductivity with a GaAs epitaxial layer of n-type conductivity grown on it, local source heterolayers of AlGaAs n⁺-type conductivity and GaAs n⁺-type conductivity on the surface of the n⁺-AlGaAs heterolayer and GaAs p⁺-type conductivity gate regions adjacent to the source n⁺-GaAs/n⁺-AlGaAs local regions made on it.

EFFECT: increasing performance, reducing parasitic gate capacities, enhancing the specific current density, and sharply reducing the levels of parasitic reverse currents.

2 cl, 5 dwg