FIELD: apparatuses for producing electron beams such as electron emitters, namely cold cathodes that may be used in different electronic devices, for example in flat displays, electronic microscopes, X-ray tubes, super high-frequency electronic apparatuses and so on.
SUBSTANCE: new cold electron emitter according to invention includes electrically conducting substrate with carbon layer on its outer surface. Said carbon layer consists of nano-porous carbon with pore diameter in range 0.6 - 4 nm. Total volume of pores of nano-pore carbon is in range 50 - 90 vol. %. Properties of samples of nano-pore carbon used as substrate are represented in table. Cold emitter of electrons provides electric current density at room temperature 100 - 200 micro A/cm2 , practically for any surface area of emission at highly uniform current.
EFFECT: improved design and enhanced quality of cold emitter of electrons.
2 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| MATERIAL ON BASIS OF DIAMOND WITH LOW THRESHOLD OF FIELD EMISSION OF ELECTRONS | 1997 |
|
RU2137242C1 |
| FIELD-EMISSION CATHODE | 2011 |
|
RU2504858C2 |
| METHOD OF PRODUCTION OF THE DIAPHRAGM WITH THE NANOPOROUS CARBON | 2004 |
|
RU2280498C2 |
| AUTOEMISSION CATHODE AND ELECTRON DEVICE BUILT ON ITS BASE ( VARIANTS ) | 1997 |
|
RU2187860C2 |
| FIELD-EMISSION FILM-COATED CATHODE AND PROCESS OF ITS MANUFACTURE | 1997 |
|
RU2161838C2 |
| FIELD EMISSION EMITTER WITH NANOCRYSTALLINE DIAMOND FILM | 2021 |
|
RU2763046C1 |
| METHOD FOR MANUFACTURE OF MATRIX OF MULTIPOINT AUTOEMISSIVE CATHODE BASED ON SINGLE-CRYSTAL SILICON | 2011 |
|
RU2484548C1 |
| FIELD-EMISSION ELEMENT WITH CATHODES BASED ON CARBON NANOTUBES AND METHOD OF ITS MAKING | 2015 |
|
RU2590897C1 |
| DEVICE BASED ON CARBON-CONTAINING COLD CATHODES ARRANGED ON SEMICONDUCTOR SUBSTRATE, AND METHOD OF MAKING SAME | 2014 |
|
RU2579777C1 |
| FIELD-EFFECT ELECTRON EMITTER | 1998 |
|
RU2149477C1 |
