DEVICE BASED ON CARBON-CONTAINING COLD CATHODES ARRANGED ON SEMICONDUCTOR SUBSTRATE, AND METHOD OF MAKING SAME Russian patent published in 2016 - IPC H01L29/00 B82B3/00 

FIELD: electricity.

SUBSTANCE: present invention consists in that device based on carbon-containing cold cathodes, which has a semiconductor substrate, on surface of which there is an insulating layer, cathode assembly located above insulating layer consists of current-carrying layer of cathode assembly, catalyst layer and an array of carbon nanotubes, located on surface of catalytic layer perpendicular to its surface, support-focusing system consisting of first dielectric, conducting gate and second dielectric layers, comprises a through cavity, anode current-carrying layer on outer surface of second dielectric layer support-focusing system, in which are formed through process holes, cathode unit additionally comprises a layer of conducting material, which is located in a through cavity on side surface of first dielectric layer support-focusing system, height of carbon nanotubes is same over entire area of massif, on surface of array of carbon nanotubes intercalated layer material and conductive layer of cathode assembly and a layer of conducting material cathode assembly have adhesive properties.

EFFECT: high emission current and time stability of said value.

4 cl, 9 dwg