FIELD: electrical engineering.
SUBSTANCE: invention relates to the field of electrical engineering, namely to devices for vacuum microelectronics, in particular to field emission elements used as field emission cathodes, to vacuum triodes, diodes and devices based on them, as well as field emission displays and vacuum microelectronic current switches. The effect is achieved by the fact that a field-emission emitter with a nanocrystalline diamond film is located on a conductive silicon substrate, made in the form of a vertically arranged tube with thin walls made of a single-layer conductive nanocrystalline diamond film or from a two-layer nanocrystalline diamond film, the inner layer of which is conductive and the outer one is non-conductive.
EFFECT: development of a field emission emitter (cathode) with high emission characteristics (high current density at low emission voltage), high current stability with a long service life.
6 cl, 4 dwg
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