CMIS PHOTODETECTOR Russian patent published in 2005 - IPC

FIELD: semiconductor integrated circuits; photosensitive digital and analog photodetectors.

SUBSTANCE: circuit of CMIS photodetector incorporates photosensitive gate and following control MIS transistors: recovery transistor whose drain is connected to power bus and source, to input of source follower built around two transistors; coupling transistor whose source contacts photosensitive gate channel; source of recovery transistor is connected to photosensitive gate and drain of coupling transistor, to additional power supply. Control pulses arriving at input of recovery transistor and gate of coupling transistor provide for extraction of charges of two adjacent frames from photosensitive gate channel.

EFFECT: ability of separating image moving fragments in focal plane of chip due to using frame-to-frame subtraction.

1 cl, 2 dwg