SILICON MULTIPLEXER Russian patent published in 2016 - IPC G11C19/00 

FIELD: electronics.

SUBSTANCE: invention relates to optoelectronics and microelectronics and can be used to read electrical signals in photodetector sub-modules, for mosaic photodetectors, in particular in photodetectors on microbolometers. Silicon multiplexer consists of vertical and horizontal shift registers, line addressing system on n-MOS transistors, output unit, output amplifier and array of reading cells, also, device includes additional vertical register, additional horizontal register, switch for transmitting control signals from vertical register to additional vertical register and from horizontal register to additional horizontal register, RAM, comparators, counters and additional links.

EFFECT: technical result is enabling reading not only within a full frame, but in fragments of full array of reading cells with user-specified coordinates and dimensions; minimising area of IC chip for reading photoelectric signal occupied by addressing unit, as well enabling reading of photoelectric signals of a fragment of a full image frame with given coordinates and dimensions.

1 cl, 2 dwg