SIGNAL-PROCESSING PHOTODETECTOR CMOS CELL Russian patent published in 2005 - IPC

FIELD: development of digital and analog devices.

SUBSTANCE: included in addition into signal-processing photodetector CMOS cell that has four components each incorporating photodiode and restoring MOS transistor and input of source follower are addition n⁺ region, additional restoring transistor, and two circuits with multiple-gate MOS structures, each incorporating two double-gate structures, coupling gate, and n⁺ injection region charge-coupled with channels of two first gates of these structures. First circuit has first gate of first multiple-gate MOS structure and second gate of second multiple-gate MOS structure interconnected and connected to photodiode of first component, as well as first gate of second multiple-gate MOS structure and second gate of first multiple-gate MOS structure interconnected and connected to photodiode of fourth component. Second circuit has first gate of first multiple-gate MOS structure and second gate of second multiple-gate structure interconnected and connected to photodiode second components, as well as first gate of second multiple-gate MOS structure and second gate of first multiple-gate MOS structure interconnected and connected to photodiode of third component. Coupling gate in each circuit is inserted between second gates of structure and addition n⁺ region whose output is connected to input of source follower and to source of additional restoring transistor whose gate is connected to power bus.

EFFECT: provision for implementing circuit discrimination function on pattern in proposed photodetector cell.

1 cl, 3 dwg