CMOS PHOTODETECTOR CELL Russian patent published in 2005 - IPC

FIELD: semiconductor integrated circuits for building photosensitive digital and analog devices.

SUBSTANCE: circuit set up of two photodiode elements 1, 2 has recovering MOS transistor 3 whose drain is connected to power bus E and source, to input of source follower built around two transistors 12, 13; connected in addition in each element are coupling gates 4, 7, storage gates 5, 8, and transmission gates 6, 9 which are charge intercoupled within each element and charge coupled with photodiodes 1, 2; there is also n⁺ region 10, 11 connected to power bus E and charge coupled with transmission gate 6, 9; storage gates of two elements are interconnected and connected to source of transistor 3; coupling and transmission gates 4 and 6 of one element, respectively, are connected to transmission and coupling gates 9 and 7, respectively, of other element; coupling gate 4 of one element is connected to gate of transistor 3.

EFFECT: provision for analog subtraction of image signals of two adjacent elements.

1 cl, 2 dwg