FIELD: inorganic chemistry and crystallography.
SUBSTANCE: the invention is pertaining to the field of inorganic chemistry and crystallography, in particular, to a method and a device for growing of large-size refractory monocrystals. The method provides for seed melting in a fixed container by heating of a feed stock and its weld penetration with subsequent crystallization and cooling-down. The seed melting of a monocrystal is conducted by a contact of a seeding agent with a melt and connection with it due to a capillary tension with a diameter in the place of the contact about 20-50 microns, At that the seeding agent is placed outside of the container at a distant of 3-5 mm away from the container spout, and the crystallization is conducted at variation of a gradient of temperatures within the limits of T = 15-20°С along the whole length of the container. The device for growing of refractory monocrystals contains a chamber of growing composed of two parts: the upper part - with a thermal unit containing a heater made in the form of a cylinder turned upside down and a system of the multilayered shields iterating the form of the heater, and the fittings for fixation of the seeding agent; and the lower part, on which a container with the feed stock mounted rigidly fixed on a support composed out of the multilayered shields. The support is made with a capability of lifting and a tight coupling with the upper part of the chamber after the container enters a thermal assembly. The invention allows to grow monocrystals of the special large dimensions and weights and at that to improve significantly their optical characteristics.
EFFECT: the invention allows to grow monocrystals of especially big dimensions and weights and to improve significantly their optical characteristics.
2 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTALS | 2002 |
|
RU2208665C1 |
DEVICE FOR GROWING OF SINGLE CRYSTALS | 2000 |
|
RU2186160C1 |
METHOD FOR GROWING SINGLE CRYSTALS OF TRINARY COMPOUND OF ZINC, GERMANIUM AND PHOSPHORUS | 2023 |
|
RU2813036C1 |
METHOD FOR GROWING HIGH-TEMPERATURE MONOCRYSTALS BY SINELNIKOV-DZIOV'S METHOD | 2016 |
|
RU2626637C1 |
DEVICE FOR PREPARATION OF SINGLE CRYSTALS OF HIGH-MELTING FLUORIDES | 2016 |
|
RU2608891C1 |
METHOD AND APPARATUS FOR GROWING OF MONOCRYSTALS FROM HIGH-MELTING POINT MATERIALS | 1991 |
|
RU2046159C1 |
DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTAL | 2008 |
|
RU2361020C1 |
REFRACTORY OXIDE MONOCRYSTALS GROWING METHOD | 2006 |
|
RU2320789C1 |
METHOD FOR GROWTH OF SAPPHIRE SINGLE CRYSTALS GROWTH | 2007 |
|
RU2355830C2 |
FACILITY FOR GROWING MONO-CRYSTALS OF HIGH-MELTING OXIDES | 2005 |
|
RU2344205C2 |
Authors
Dates
2005-07-10—Published
2003-08-18—Filed