DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTALS Russian patent published in 2003 - IPC

Abstract RU 2208665 C1

FIELD: crystallography. SUBSTANCE: device has growing chamber accommodating heat unit including heater, current leads, system of multilayer shields in form of rectangular parallelepiped surrounding the heater to form inlet and outlet parts of tunnel, and sledge connected with mobile mechanism. Heater is made in form of monoblock of laminated graphite monolith produced by sintering of graphite fibers at temperature of 2600 C. One of current leads is made of multilayer flexible busbar. Contacting surfaces of heater and current leads are concave and convex in shape, respectively. Device design allows growing of large-sized single crystals with width of up to 500 mm and features high stability that results in substantial reduction of power consumption and temperature gradient in crystallization zone. EFFECT: improved design and efficiency. 2 dwg

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RU 2 208 665 C1

Authors

Arzumanjan Sh.O.

Dates

2003-07-20Published

2002-03-21Filed