DEVICE FOR GROWING OF SINGLE CRYSTALS Russian patent published in 2002 - IPC

FIELD: crystallography. SUBSTANCE: the device has a growth chamber with a heat unit positioned in it, the unit consists of a multiturn heater, system of multilayer water walls enveloping the heater and forming the receiving and starting sections of the tunnel, and a scraper coupled to the positioning mechanism. The heat unit is installed on bolsters of refractory material secured on the chamber bottom through ceramic electric insulators, one of the heater turns is installed on a support of refractory material located on the lower water wall, and the scraper is coupled to the positioning mechanism through the electric insulators. EFFECT: reduced specific quantity of metal per structure and cost of manufacture, enhanced stability of operation, produced uniform fields both in the transverse and radial sections of the crystallization zone. Ensured complete electric insulation of the heat unit, which prevents failures as a result of short-circuit faults. 1 dwg