LOW TEMPERATURE GLASS CERAMIC MATERIAL FOR ELECTRONIC TECHNOLOGY Russian patent published in 2021 - IPC C03C14/00 C04B35/117 C04B35/10 C03C3/78 C03C3/95 C03C3/105 C03C3/108 C03C4/16 

FIELD: radio and electronic engineering.

SUBSTANCE: invention relates to a low-temperature glass-ceramic material that can be used in radio and electronic engineering for the manufacture of dielectric layers in substrates, housings and multilayer structures for electronic devices operating in high-frequency and ultra-high-frequency ranges. Low-temperature glass-ceramic material contains low-temperature non-crystallizing glass and aluminum oxide at a ratio by weight (1.0-1.6):(1.0-0.4), respectively, and low-temperature non-crystallizing glass contains the following components: silicon oxide (SiO₂) in an amount from 32.5 to 64 wt.%, aluminum oxide (Al₂O₃) in an amount from 1.8 to 5.0 wt. %, boron oxide (B₂O₃) in an amount from 8 to 14 wt.%, lead oxide (PbO) in an amount from 0.1 to 5 wt.%, barium oxide (BaO) in an amount from 21.5 to 39 wt.%, cobalt oxide (CoO) in an amount from 0.25 to 0.55 wt.%, nickel oxide (NiO) in the amount of 0.05 wt.%, sodium oxide (Na₂O) in the amount of 2.4 wt.%, potassium oxide (K₂O) in the amount of 1.6 wt.%.

EFFECT: low-temperature glass-ceramic material according to the invention is sintered in the range of 850-900°C, has a relative density of up to 95.42% and high dielectric characteristics in the high-frequency and ultra-high-frequency ranges.

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