METHOD FOR PRODUCTION OF SELENIUM DIOXIDE OF HIGH PURITY Russian patent published in 2006 - IPC C01B19/00 

Abstract RU 2270166 C1

FIELD: inorganic chemistry, in particular production of selenium dioxide useful in organic synthesis and semiconductor technology.

SUBSTANCE: selenium dioxide is produced by zinc selenide oxidation with oxygen at atmospheric pressure. Oxidation is carried out in two step with two oxygen flows simultaneously, wherein in the first step zinc selenide is oxidized with oxygen flow at temperature of 300°C or more and in the second one volatile products formed in the first step are additionally oxidized at temperature of 600°C or more, and oxygen flows in the first and second steps are fed in ratio of 1:3-4), respectively. Obtained selenium dioxide vapor is condensed.

EFFECT: method for reprocessing of waste from zinc selenide-based optical element production; closed wasteless technology for optical element production.

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RU 2 270 166 C1

Authors

Devjatykh Grigorij Grigor'Evich

Mazavin Sergej Mikhajlovich

Tikhonova Elena Leonidovna

Karaksina Ehlla Vladimirovna

Gavrishchuk Evgenij Mikhajlovich

Dates

2006-02-20Published

2004-12-07Filed