PROCESS OF PRODUCTION OF HIGH-PURITY CRYSTALLINE COMPOUNDS AND GEAR FOR ITS IMPLEMENTATION Russian patent published in 1999 - IPC

FIELD: preparation of high-purity materials for semiconductor devices. SUBSTANCE: invention refers to synthesis and purification of non-stoichiometric crystalline compounds A₂B₆, A₂B₅ and A₄B₆ of semiconductor class. Crystalline compound is placed into working part of reactor and is purified by multiple conversion to gaseous phase and back. Synthesis of compound to be purified is conducted in same reactor beforehand. For it starting substances are positioned in vacuumed reactor, one substance in the form of thin layer is deposited, then second substance is converted to gaseous phase also by heating and is fed on to layer of first starting substance to produce crystalline compound that is later subjected to purification. Gear for implementation of process presents vacuumed reactor with auxiliary and working parts. Working part is manufactured in the form of ring-shaped space between two cylinders. Cover with end tube having tags for connection to vacuum and cryogenic pumps is bordering on auxiliary part. Reactor is placed into furnace fitted with aid for its movement along reactor. EFFECT: integration of purification of crystalline compound with direct semi-industrial method of synthesis to produce ultra-pure product in sufficient, up to one kilogram, quantities. 10 cl, 3 dwg