FIELD: manufacturing technology.
SUBSTANCE: invention relates to the technology of inorganic materials, particularly high-purity elementary substances, and a method of increasing impurity purity of elementary tellurium. In the method of purifying elementary tellurium by vacuum distillation prior to purification, a weighed portion of zinc metal is added to the initial tellurium. Then obtained mixture is melted and held at temperature of 750–850 °C at inert gas pressure sufficient to suppress melt evaporation. Then reducing temperature to 490–530 °C, distillation is carried out in a vacuum, purified tellurium is deposited at temperature of 390–410 °C.
EFFECT: higher efficiency of cleaning tellurium from impurities of selenium in vacuum distillation, simple process of cleaning and fewer steps.
7 cl, 2 tbl, 2 ex
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