FIELD: processes for pressure welding of metallic lead wires, possibly at making power semiconductor devices.
SUBSTANCE: method comprises steps of applying initial pressure to parts; at action of initial pressure upon Y-shaped electrode ultrasonic oscillations are applied in addition; heating parts by means of V-shaped electrode; then applying additional pressure while decreasing amplitude of said oscillations till zero. Invention provides lowered pressure at welding leads on chip and increased contact area of joined surfaces.
EFFECT: enhanced operational reliability of powerful semiconductor devices, improved efficiency of method due to shortened time period for forming welded joints.
2 dwg
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Authors
Dates
2006-03-20—Published
2004-01-08—Filed