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(11)

2 525 962

(13)

(51)

IPC

B23K31/02(2006-01-01)

B23K20/10(2006-01-01)

B23K101/40(2006-01-01)

(21) (22)

Application

2013106268/02, 2013-02-13

(24)

Start date

2013-02-13

(22)

Actual filing date

2013-02-13

(45)

Published

2014-08-20

(72)

Inventor

Zenin Viktor Vasil'EvichKolbenkov Anatolij AleksandrovichStojanov Andrej Anatol'EvichSharapov Jurij Viktorovich

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo Institut Ehlektronnoj Tekhniki"

METHOD TO WELD LEAD IN SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC B23K31/02 B23K20/10 B23K101/40

Abstract RU 2525962 C1

FIELD: electricity.

SUBSTANCE: additional pressure is applied with reduction of amplitude of ultrasonic oscillations to zero. At the moment of application of additional pressure to a V-shaped electrode, a higher current pulse is applied, providing for initiation of plastic deformation of connected materials due to jump-like increase of temperature in the connection area.

EFFECT: simplified design of a welding unit, increased strength of welded joints, reduced welding time and increased reliability of power semiconductor devices.

1 dwg

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RU 2 525 962 C1

Authors

Zenin Viktor Vasil'Evich

Kolbenkov Anatolij Aleksandrovich

Stojanov Andrej Anatol'Evich

Sharapov Jurij Viktorovich

Dates

2014-08-20—Published

2013-02-13—Filed