SEMICONDUCTOR CERAMIC MATERIAL Russian patent published in 2006 - IPC H01C7/04 

Abstract RU 2279729 C2

FIELD: electric engineering, in particular, engineering and manufacture of thermo-resistors.

SUBSTANCE: semiconductor ceramic material is made on basis of composition Y(Ba1-XBeX)2Cu3O7, where 1 ≥ x ≥ 0,7, produced by mixing source powders Y2O, BaCO3, BeO, CuO in water-less spirits, their pressing under pressure of 10 atmospheres and baking at temperature 920-1100°C, during which Be is partially replaced with Ba, contained in skull of ceramics on basis of Y(Ba1-XBeX)2Cu3O7, where 0,001 < x < 0,4 with production of several solid solutions.

EFFECT: creation of semiconductor material, resistant to thermal, mechanical and electrical loads, with broad conductivity spectrum ranging from 1·10-2 to 2,5·102 Ohm·meter.

3 dwg

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RU 2 279 729 C2

Authors

Palchaev Dair Kairovich

Murliev Arsen Kamil'Evich

Dates

2006-07-10Published

2004-03-31Filed