SEMICONDUCTOR NANOSTRUCTURED CERAMIC MATERIAL Russian patent published in 2021 - IPC H01C7/04 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering, namely to a highly efficient method for manufacturing nanostructured semiconductor materials based on phases with a perovskite structure containing cations of yttrium, beryllium, barium and copper with different densities required for thermistors with a negative temperature coefficient of resistance. The effect is achieved by compacting micropowders and processing them for an hour at a temperature of 600-900°C at a lifting and cooling rate of no higher than ~ 5°C/min and ~ 3°C/min, respectively, with a quantitative ratio of nanopowders from 40:60 to 60:40, obtained with technological substitutions of beryllium for barium in the compound YВе₂Сu₃О_7-δ, followed by pressing at a pressure of at least 100 MPa and sintering at a temperature of 900 to 920°C for 1 - 10 hours.

EFFECT: obtaining nanostructured thermoresistive materials with a given porosity and electrical properties at relatively low temperatures (less than 920°C) and a time of less than 10 hours.

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