FIELD: ceramics.
SUBSTANCE: invention relates to cryoelectronics area and can be used when creating active elements of cryoelectronic circuits and consists is preparation of simply workable ceramic material composed as expressed in formula AgxPb2xCuyOz, wherein x=2, y=1-3, and z=(5x+2y)/2-(7x+2y)/2, synthesized under air or oxygen atmosphere at 600-750°C and pressure 1-6 atm, and having phase transfer semiconductor-dielectric in the region of 160-180 K.
EFFECT: simplified material preparation technology.
4 dwg
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Authors
Dates
2006-08-20—Published
2004-12-27—Filed