METHOD OF FORMING HIGH CURRENT-CARRYING CAPACITY YBaCuO FILMS ON GOLD BUFFER UNDERLAYER Russian patent published in 2015 - IPC H01L39/24 

FIELD: chemistry.

SUBSTANCE: in the method of forming high current-carrying capacity YBa₂Cu₃O_7-x films on a gold buffer underlayer, a gold contact pad is formed on a dielectric substrate before depositing YBa₂Cu₃O_7-x films on the dielectric substrate. Targets made of gold and ceramic YBa₂Cu₃O₇ are sputtered using a laser with radiation wavelength of 1.06 mcm, pulse duration of 10-20 ns, pulse repetition frequency of 10 Hz and laser radiation power density of (5-7)·10⁸ W/cm². The method comprises preheating the gold target and substrate to temperature T=450-500°C, establishing pressure of 0.1-0.5 Pa, sputtering the gold target onto the substrate through a screen, placed 0.3-0.5 mm from the substrate, heating the YBa₂Cu₃O₇ target to T=600-700°C, heating the substrate to 800-840°C, establishing pressure of 50-100 Pa and sputtering the YBa₂Cu₃O₇ target onto the formed contact pads to thickness of 50-200 nm to form films with critical temperature of the superconducting junction T_s=88-89 K, width of the superconducting junction ΔT_s= 2-3 K and critical current density J_c>10⁵ A/cm².

EFFECT: obtaining superconducting films with high current-carrying capacity on a gold buffer underlayer, which provide high density of critical supercurrent density.

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