METHOD OF INCREASING THE CRITICAL TEMPERATURE OF A SUPERCONDUCTING TRANSITION IN A SURFACE LAYER OF A HIGH-TEMPERATURE SUPERCONDUCTOR Russian patent published in 2018 - IPC H01B12/00 

Abstract RU 2660806 C1

FIELD: technological processes.

SUBSTANCE: invention relates to methods for increasing the critical temperature of a superconducting transition (Ts) in high-temperature superconductors (HTSCs) and can be used to create various kinds of sensors and counters in ultra-high-speed electronic devices, cryoelectronic devices, microwave detectors, etc. Dielectric layer is applied on a high-temperature superconductor, on top of which a layer of conductor is applied and a potential difference is created between the superconductor and the conductor layer, connecting them to a voltage source. Voltage source is regulated by voltage value.

EFFECT: invention provides an increase in the critical temperature of a superconducting transition in a surface layer of a high-temperature superconductor.

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RU 2 660 806 C1

Authors

Burkhanov Gennadij Sergeevich

Lachenkov Sergej Anatolevich

Kononov Mikhail Anatolevich

Vlasenko Vladimir Aleksandrovich

Dementeva Valentina Pavlovna

Dates

2018-07-10Published

2017-04-24Filed