FIELD: photodiodes responding to ultraviolet spectrum region.
SUBSTANCE: proposed ultraviolet photodetector characterized in reduced sensitivity in visible region of spectrum has transparent hole-injection layer that functions as anode applied to solid transparent substrate, organic semiconductor layer, and electron-injection metal layer that functions as cathode. Organic semiconductor layer has active photosensitive layer of 3-(4-biphenyl)-(4-tertiary-butyl phenyl)-(4-dimethyl amino phenyl)-1,2,4-triazole (DA-BuTAZ) that abuts against cathode and organic hole-conducting layer that abuts against anode.
EFFECT: maximized photosensitivity in ultraviolet spectrum region at reduced sensitivity in visible region.
3 cl, 2 dwg
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Authors
Dates
2006-12-20—Published
2005-04-13—Filed