FIELD: physics.
SUBSTANCE: according to the invention a light-emitting semiconductor device is offered. It comprises of a packet of layers, whereas the packet of layers includes a cathode, a semiconductor layer containing emission material with emission in the range of 300-900 nm, an insulating layer and an anode. The cathode is in electrical contact with the semiconductor layer, the anode is in electrical contact with the insulating layer, wherein the insulating layer has a thickness in the range of up to 50 nm, and the semiconductor layer comprises of an aluminium-alloyed zinc-magnesium oxide layer with 1-350 million-1 Al.
EFFECT: possibility of obtaining large light-emitting surfaces that can be activated at significantly lower power densities, an increase in the quantum output.
15 cl, 3 tbl, 13 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR OPTICAL ELEMENT AND ITS MANUFACTURING PROCESS; SEMICONDUCTOR OPTICAL ELEMENT BASED ON GROUP II OXIDE ELEMENT AND ITS MANUFACTURING PROCESS | 1998 |
|
RU2169413C2 |
| LIGHT-EMITTING DEVICE | 2005 |
|
RU2358354C2 |
| FIELD TRANSISTOR | 2005 |
|
RU2358355C2 |
| AMORPHOUS OXIDE AND FIELD-EFFECT TRANSISTOR USING SAID OXIDE | 2008 |
|
RU2399989C2 |
| AMORPHOUS OXIDE AND FIELD TRANSISTOR USING IT | 2008 |
|
RU2402106C2 |
| SEMICONDUCTOR ADJUSTABLE-COLOR ELECTROLUMINESCENT LIGHT SOURCE | 2001 |
|
RU2202843C2 |
| METHOD FOR MANUFACTURING ALGAN - HETEROSTRUCTURES FOR SOLAR-BLIND PHOTOCATHODES IN THE UV RANGE | 2021 |
|
RU2781509C1 |
| LED USING LUMINESCENT SAPPHIRE AS THE LOWER-RETURN TRANSVERSER | 2014 |
|
RU2686862C2 |
| METHOD FOR MANUFACTURING PHOTODETECTOR WITH LIMITED RANGE OF SPECTRAL SENSITIVITY BASED ON ARRAY OF ZINC OXIDE NANORODS | 2016 |
|
RU2641504C1 |
| P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING R-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM | 2014 |
|
RU2660407C2 |
