METHOD FOR CONTROLLING SEMICONDUCTOR SWITCH Russian patent published in 2006 - IPC H02M1/08 

FIELD: semiconductor engineering; generating pulsed or continuous-wave control signal by semiconductor switch isolated from input control circuit.

SUBSTANCE: proposed method includes conversion of input-section supply voltage into current pulses through input section of coupling transformer, current pulse amplitude being limited by controlling pulse length and repetition rate, as well as discrimination of semiconductor-switch sawtooth control signal across coupling-transformer output section. To this end rise time of current pulse amplitude is set through output section of coupling transformer to desired level not to exceed critical value and in order to turn on or off semiconductor switch or to maintain it in on- or off-position voltage discriminated in one direction is checked upon expiration of desired time interval counted from moment of first threshold level of voltage across coupling transformer output section for its rising above second threshold level, first threshold voltage being set not to exceed threshold voltage of semiconductor switch and second threshold voltage, to be higher than minimal permissible control voltage for semiconductor switch; check results are used to regulate voltage in one direction discriminated across coupling-transformer output section in semiconductor switch control circuit.

EFFECT: enhanced reliability and stability of semiconductor switch control characteristics.

1 cl, 9 dwg, 4 ex