METHOD FOR PRODUCTION OF SEMICONDUCTOR SYSTEMS ON BASIS OF FOIL-COATED POLYIMIDE Russian patent published in 2007 - IPC H05K3/26 

FIELD: technology for producing semiconductor systems, in particular, opening contact areas in electronic boards, loop circuits, micro-circuits, made on basis of polyimide film, when it is necessary to remove adhesive made of epoxide resin from contact areas, which resin is used for gluing copper foil to polyimide base.

SUBSTANCE: in suggested method a sample of foiled polyimide with adhesive layer of epoxide resin with applied photo-resistive mask is processed in solution of mono-ethanol-amine at temperature of about 100°C for removal of polyimide layer, after that adhesive layer is removed from epoxide resin in two stages, while at first stage sample is processed with solution of dimethylformamide with spirits or dimethylformamide with ethylene glycol for swelling, and at second stage sample is processed with solution of non-organic acid, while both stages are realized at temperature of 20-50°C.

EFFECT: possible removal of adhesive at low temperatures, without changing size and shape of contact areas etched in polyimide layer, because solutions used for removal of epoxide resin do not interact with polyimide layer.

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