FIELD: electric engineering, in particular method for manufacturing semiconductor systems made on basis of polyimide, where opening of contact areas is required for connecting conductive layers of various levels of electronic boards.
SUBSTANCE: in accordance to method used as etching solution is solution, containing, in percents of mass: mono-ethanol-amine - 20,4-71,26, alkali - 30-50, tetra-methyl-ammonium hydrate or tetra-butyl-ammonium hydrate - 10-14, water - the rest, while etching of unprotected sections of film is performed at temperature of 100±5°C.
EFFECT: creation of conditions for etching of fully polymerized polyimide, ensuring precision of shape and dimensions of etched sections under conditions of better manufacturability.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
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|
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