METHOD FOR MANUFACTURING MICROELECTRONIC UNIT Russian patent published in 2023 - IPC H01L27/00 

FIELD: microelectronics.

SUBSTANCE: technology for manufacturing electronic equipment using mainly unpackaged microelectronic components and can be used in the manufacture of devices and microassemblies consisting of several semiconductor or other components on a solid body, formed on one common substrate or inside it. Essence: formation of windows in the substrate of the assembled microelectronic unit for installation of pre-tested and programmed unpackaged crystals is carried out after formation of multi-level switching layers with windows. Formation of multi-level switching layers is carried out on both sides of the substrate, the switching layers in contact with the process environment are formed on the basis of gold, windows of the assembly and vias are formed by “dry” etching of a high-resistivity silicon substrate in the Bosch process through a dielectric mask included in the multi-level switching layers. Windows for metallization of the ends of the microelectronic assembly are formed by “dry” etching of a high-resistivity silicon substrate in the Bosch process through a dielectric mask, included in multi-level switching layers. Polypyromellitimide is used as a dielectric in multi-level switching layers, metallization of vias and/or metallization of the ends in windows is carried out using the vacuum method through a removable mask, which excludes metallization of the windows of the substrate of the assembled assembly, and the substrate is divided into crystals of the microelectronic assembly along the cut line, without affecting the metallization ends in the windows.

EFFECT: improved manufacturability of the design.

8 cl, 17 dwg