METHOD FOR FORMING CONTACT WINDOWS IN THE LAYER OF THE PROTECTIVE FOUNDATION OF A HIGH-VOLTAGE DEVICE Russian patent published in 2018 - IPC H01L21/308 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to electronic semiconductor technology, namely to the technology of manufacturing high-voltage silicon devices and is aimed at improving the electrical characteristics of high-voltage devices, reducing the amount of failure of devices as a result of breakage of metal and breakdown on the surface of high-voltage planar r-p junctions. Method provides for forming contact windows in a protective base layer of a high voltage device, comprising forming a dielectric layer on a metallization layer, depositing a passivation layer, depositing a photoresist through a mask, plasma-chemical etching to metal, removal of photoresist, deposition of the second metallization layer, polyimide is applied by centrifugation as a dielectric layer, after which it is polymerized at a temperature of 350–450 °C, after the application of the photoresist the passivation layer is undercut to the polyimide for the photoresist mask using liquid chemical etching, then plasma hemic etching of the surface is carried out for half the etching time of the polyimide, residues of the photoresist are removed and the photoresist layer is again applied through a smaller mask for etching to the metal.

EFFECT: technical result of the invention is the formation of contact windows with a gentle profile in the protective layer of a double metallized structure with the ability to conduct splicing above the active region of the crystal of high voltage device.

5 cl, 8 dwg