THICK-FILM CONTACT OF SILICON PHOTOELECTRIC CONVERTER AND ITS MANUFACTURING PROCESS Russian patent published in 2007 - IPC H01L31/224 H01L31/18 

FIELD: solar-to-electrical energy conversion; contacts for photoelectric semiconductor converters of various configurations.

SUBSTANCE: proposed contact is built on thin silicon semiconductor wafer and has narrow current-carrying conductors in the form of current-collecting strips crossed at right angle by two wider current-carrying conductors in the form of current-collecting strips disposed symmetrically either side of longitudinal axis. Metal coat applied to 95-98% of surface area of narrow current-collecting strips can be disposed at distance of 0 - 3 mm from edges of wide current-collecting strips, that is, in immediate proximity of wide current-collecting strip edges. Invention specification also gives manufacturing process for this thick-film contact of silicon photoelectric converter.

EFFECT: enhanced mechanical strength of joints and contact mechanical design, extended service life of converter and thick-film contact, reduced labor consumption for its manufacture, enhanced photoelectric converter efficiency.

14 cl, 3 dwg