FIELD: physics.
SUBSTANCE: contact grid of heterotransitional photoelectric converter based on silicon contains transverse grid elements or transverse and longitudinal grid elements made of metal, wherein the grid elements consist of an antidiffusion sub-layer and a layer of low-temperature solder.
EFFECT: providing possibility to increase the strength of the mechanical connection when switching individual photoelectric converters into a single circuit, improve reliability, reduce contact resistance and increase the service life of the photoelectric converter.
6 cl, 6 dwg
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