CIRCUIT FOR CONTROLLING SERIAL KEY ON METAL-DIELECTRIC-SEMICONDUCTOR TRANSISTOR Russian patent published in 2007 - IPC H03K17/567 G05F1/56 

FIELD: electric engineering, possible use in impulse secondary electric power supplies.

SUBSTANCE: control circuit contains power metal-dielectric-semiconductor transistor (1), load (2), coupled between source (1) and negative bus (14) of power supply, controlling transistor (13), serially connected diode (10) and resistive divider (11,12), capacitor (5). Introduced additionally are two transistors (6,7), two diodes (8,9) and two resistors (3,4), where collector-base transition of transistor (6) is coupled in parallel to resistor (11) of divider, base-emitter transition of transistor (6) is bridged by a contra-directionally coupled first diode (8), emitter of transistor (6) is connected to collector of transistor (7) and to one contact of capacitor (5), other contact of which is connected to source of transistor (1), base-emitter transition of transistor (7) is bridged by a contra-directionally coupled diode (9), where base of transistor (7) and cathode of diode (9) are connected to collector of controlling transistor (13) and to contact of resistor (12) of divider, and emitter of transistor (7) through resistor (4) is connected to gate of transistor (1), resistor (3) is installed in parallel to gate-source transition of transistor (1).

EFFECT: increased efficiency and increased speed of operation of key on metal-dielectric-semiconductor transistor.

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