DEVICE FOR MEASURING LIFETIME OF MINORITY CHARGE CARRIERS IN SEMICONDUCTORS Russian patent published in 2008 - IPC G01R31/26 

FIELD: measuring equipment, namely, measurement of electro-physical parameters of semiconductor materials with usage of probing electromagnetic radiation of high frequency, possible use for determining lifetime of minority charge carriers in silicon plates and ingots.

SUBSTANCE: device for measuring lifetime of minority charge carriers in semiconductors contains oscillator of high frequency electromagnetic oscillations, open resonator of electromagnetic oscillations with inbuilt light conductor for supplying light beam to the semiconductor surface, circulator, detector block, semiconductor laser engaged with light conductor, for generation of electron-hole pairs in the volume of semiconductor, block for generation and block for registration of output signal with usage of computer. Open resonator represents a length of rectangular wave conductor open on one end, in which a rectangular insert of variable height is installed, which monotonously transitions into plane of upper wave conductor surface on approach to back wall of resonator, which creates rectangular emitting output slit in the cavity of open end of resonator.

EFFECT: increased precision and increased reliability when measuring lifetime.

3 cl, 1 dwg