FIELD: physics.
SUBSTANCE: invention relates to using probing electromagnetic UHF-radiation for defining lifetime of nonequilibrium charge carriers in semiconductor plates and ingots by contactless UHF method. Proposed device with controlled UHF unit, measuring unit, UHF resonator, automatic computer-aided calibration and measurement unit includes UHF resonator made up of dielectric substrate with laser diode secured on its one completely metallised shield side and strip conductor made on its opposite side and coiled so that its opposite ends are passed together through gap. Note that through hole is made between said ends for laser diode beam to pass there through.
EFFECT: higher accuracy of measurement.
2 dwg
Title | Year | Author | Number |
---|---|---|---|
DEVICE TO MEASURE LIFE TIME OF MINORITY CHARGE CARRIERS IN SEMICONDUCTORS | 2011 |
|
RU2451298C1 |
DEVICE FOR MEASURING LIFETIME OF MINORITY CHARGE CARRIERS IN SEMICONDUCTORS | 2006 |
|
RU2318218C1 |
OPTICALLY-CONTROLLED SWITCH OF MILLIMETER RANGE WITH BUILT-IN LIGHT SOURCE, BASED ON TRANSMISSION LINE WITH SEMICONDUCTOR SUBSTRATE | 2019 |
|
RU2721303C1 |
CONVERTER OF MICROWAVE FREQUENCY POWER AND A TRANSFORMING ELEMENT FOR IT | 2005 |
|
RU2295137C1 |
MODULATOR OF ELECTROMAGNETIC RADIATION OF SUBTERAHERTZ AND TERAHERTZ BAND FOR HIGH-SPEED WIRELESS COMMUNICATION SYSTEMS | 2016 |
|
RU2626220C1 |
COAXIAL RESONATOR FOR MEASUREMENT OF CAPACITOR Q-FACTOR | 2008 |
|
RU2367964C1 |
SENSOR FOR MEASURING CHARGE CARRIER HALL MOBILITY IN SEMICONDUCTOR | 0 |
|
SU1665290A1 |
METHOD OF DEFINING ELECTROPHYSICAL PARAMETRES OF SEMICONDUCTORS | 2005 |
|
RU2330300C2 |
DEVICE FOR COULOMETRIC MEASUREMENT OF ELECTROPHYSICAL PARAMETERS OF n-MOS TRANSISTOR NANOSTRUCTURES IN CMOS/SOI TECHNOLOGIES | 2011 |
|
RU2456627C1 |
DEVICE FOR BROADBAND ANALOG MODULATION OF SEMICONDUCTOR LASER | 1991 |
|
RU2007803C1 |
Authors
Dates
2011-09-27—Published
2010-02-09—Filed