FIELD: semiconductor control technology.
SUBSTANCE: surface photoelectromotive force is induced by electromagnetic rectangular pulse with intensity ranging from zero to the values sufficient for saturation state. Emission falls onto semiconductor surface through transparent capacitor electrode. Pulse amplitude and form of surface photoelectromotive force is registered via that electrode and metering circuit. Measurements are taken at different electromagnetic pulse intensity. Parametres of relaxation processes are calculated by the registered properties, and that allows defining of electrophysical parametres of the semiconductor, such as density, energy and capture cross-section of deep levels (DL) and surface states (SS), surface charge, surface potential, and minority carrier lifetime.
EFFECT: this invention is most effective in contact-free in-line check of parametres of deep levels, surface states, surface potential, and minority carrier lifetime.
3 cl, 1 tbl, 7 dwg
